

SAMSUNG 9100 PRO 2TB NVMe™ M.2 Solid State Drive


SPECIFICATION
|
Part Number |
MZ-VAP2T0BW |
|
Interface |
PCIe® 5.0 ×4, NVMe™ 2.0 |
|
Form Factor |
M.2 (2280) / M.2 (2280) with Heatsink |
|
Sequential Read/Write |
14 700 / 13 400 MB/s |
|
Random Read/Write |
1 850 K / 2 600 K IOPS (QD32) |
|
Power (Active Read/Write) |
8.1 W / 7.9 W |
|
Device Sleep (L1.2) |
4.8 mW / 4.0 mW |
|
Data Encryption |
Class 0 (AES-256), TCG/Opal v2.0, MS eDrive (IEEE 1667) |
|
Total Bytes Written (TBW) |
1 200 TB |
|
Capacity |
2 TB |
|
NAND |
Samsung V-NAND TLC (V8) |
|
Controller |
In-House Controller |
|
Cache Memory |
2 GB LPDDR4X |
|
Product Dimensions (W × H × D) |
0.9 × 0.09 × 3.2 in. |
|
Package Size |
3.9 × 0.9 × 5.6 in. |
|
Inner Box Size |
7.2 × 5.4 × 9.4 in. |
|
Product Weight |
0.02 lb |
|
Package Weight |
0.16 lb |
|
Inner Box Weight |
0.36 lb |
Original: $397.37
-70%$397.37
$119.21Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description


SPECIFICATION
|
Part Number |
MZ-VAP2T0BW |
|
Interface |
PCIe® 5.0 ×4, NVMe™ 2.0 |
|
Form Factor |
M.2 (2280) / M.2 (2280) with Heatsink |
|
Sequential Read/Write |
14 700 / 13 400 MB/s |
|
Random Read/Write |
1 850 K / 2 600 K IOPS (QD32) |
|
Power (Active Read/Write) |
8.1 W / 7.9 W |
|
Device Sleep (L1.2) |
4.8 mW / 4.0 mW |
|
Data Encryption |
Class 0 (AES-256), TCG/Opal v2.0, MS eDrive (IEEE 1667) |
|
Total Bytes Written (TBW) |
1 200 TB |
|
Capacity |
2 TB |
|
NAND |
Samsung V-NAND TLC (V8) |
|
Controller |
In-House Controller |
|
Cache Memory |
2 GB LPDDR4X |
|
Product Dimensions (W × H × D) |
0.9 × 0.09 × 3.2 in. |
|
Package Size |
3.9 × 0.9 × 5.6 in. |
|
Inner Box Size |
7.2 × 5.4 × 9.4 in. |
|
Product Weight |
0.02 lb |
|
Package Weight |
0.16 lb |
|
Inner Box Weight |
0.36 lb |



















